China’s Ministry of Industry and Information Technology and National Development and Reform Commission have released a 15th Five-Year Plan for the development of the electronic-information manufacturing industry.
The plan reportedly gives high-bandwidth memory, or HBM, and high-bandwidth flash, or HBF, prominent positions among next-generation memory technologies. The emphasis reflects China’s effort to strengthen domestic capabilities across the AI hardware supply chain.
HBM is a critical component in advanced AI accelerators because it provides high memory bandwidth in a compact package. HBF is an emerging area focused on applying high-throughput memory concepts to flash-based storage and related systems.
The policy direction adds to China’s broader push to reduce dependence on overseas semiconductor technologies, although the plan does not by itself establish new production capacity or resolve gaps in advanced memory manufacturing. Its significance is primarily strategic: memory is being treated as a national technology priority alongside processors and manufacturing equipment.
